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 HA-2548/883
July 1997
Precision, High Slew Rate, Wideband Operational Amplifier
Description
The HA-2548/883 is a monolithic op amp that offers a unique combination of bandwidth, slew rate, and precision specifications. These features can eliminate the need for composite op amp designs and external calibration circuitry. Optimized for gains 5, the HA-2548/883 has a gain bandwidth product of 150MHz (typ) and a slew rate of 120V/s (typ) while maintaining an extremely high open loop gain of 130dB (typ) and a low offset voltage of 300V (typ). These specifications are achieved through uniquely designed input circuitry and a single ultra-high gain stage that minimizes the AC signal path. Capable of delivering over 30mA (min) of output current, the HA-2548/883 is ideal for precision, high speed applications such as signal conditioning, instrumentation, video/pulse amplifiers and buffers.
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * High Slew Rate . . . . . . . . . . . . . . . . . . . . . 120V/s (Typ) * Low Offset Voltage. . . . . . . . . . . . . . . . . . . . 300V (Typ) 900V (Max) * High Open Loop Gain . . . . . . . . . . . . . . . . . 130dB (Typ) 114dB (Min) * Gain Bandwidth Product . . . . . . . . . . . . . 150MHz (Typ) * Low Voltage Noise at 1kHz . . . . . . . . . . 8.3nV/Hz (Typ) * Minimum Gain Stability . . . . . . . . . . . . . . . . . . . 5 (Typ)
Applications
* High Speed Instrumentation * Data Acquisition Systems * Analog Signal Conditioning * Precision, Wideband Amplifiers * Pulse/RF Amplifiers
Ordering Information
PART NUMBER HA2-2548/883 TEMP. RANGE (oC) -55 to 125 PACKAGE 8 Pin Can PKG. NO. T8.C
Pinout
HA-2548/883 (METAL CAN) TOP VIEW
COMP 8 +BAL 1 + 7 V+ 6 OUT
-IN
2
+IN 3 4 V-
5 -BAL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number
1
511069-883 File Number 2472.2
HA-2548/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (< 10% Duty Cycle). . . . . . . . . . . . . . . . . 60mA Continuous Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Information
Thermal Resistance (Typical, Note 1) JA JC Metal Can Package . . . . . . . . . . . . . . . 142oC/W 66oC/W Package Power Dissipation Limit at 75oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70W Package Power Dissipation Derating Factor Above 75oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0mW/oC Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 175oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V VINCM 1/2 (V+ - V-) RL 1k
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. JA is measured with the component mounted on an evaluation PC board in free air. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Input Offset Voltage SYMBOL VIO CONDITIONS VCM = 0V GROUP A SUBGROUPS 1 2, 3 Input Bias Current +IB VCM = 0V, +RS = 100.1k, -RS = 100 VCM = 0V, +RS = 100, -RS = 100.1k VCM = 0V, +RS = 100.1k, -RS = 100.1k V+ = +8V, V- = -22V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 -CMR V+ = +22V, V- = -8V 1 2, 3 Large Signal Voltage Gain +AVOL VOUT = 0V and +10V, RL = 1k VOUT = 0V and -10V, RL = 1k VCM = +2V, V+ = +13V, V- = -17V, VOUT = -2V VCM = -2V, V+ = +17V, V- = -13V, VOUT = 2V 4 5, 6 4 5, 6 1 2, 3 1 2, 3 TEMP. (oC) 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 MIN -900 -1200 -50 -100 -50 -100 -50 -100 7 7 114 108 114 108 80 80 80 80 MAX 900 1200 50 100 50 100 50 100 -7 -7 UNITS V V nA nA nA nA nA nA V V V V dB dB dB dB dB dB dB dB
-IB
Input Offset Current
IIO
Common Mode Range
+CMR
-AVOL
Common Mode Rejection Ratio
+CMRR
-CMRR
Spec Number 2
511069-883
HA-2548/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Output Voltage Swing SYMBOL +VOUT CONDITIONS RL = 1k GROUP A SUBGROUPS 4 5, 6 -VOUT RL = 1k 4 5, 6 Output Current +IOUT VOUT = +10V 4 5, 6 -IOUT VOUT = -10V 4 5, 6 Quiescent Power Supply Current +ICC VOUT = 0V, IOUT = 0mA VOUT = 0V, IOUT = 0mA VSUP = 10V, V+ = +10V, V- = -15V, V+ = +20V, V- = -15V VSUP = 10V, V+ = +15V, V- = -10V, V+ = +15V, V- = -20V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 TEMP. (oC) 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 25 125, -55 MIN 11 11 30 30 -18 -18 86 86 86 86 MAX -11 -11 -30 -30 18 18 UNITS V V V V mA mA mA mA mA mA mA mA dB dB dB dB
-ICC
Power Supply Rejection Ratio
+PSRR
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Characteristics in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 1k, CLOAD 10pF, Unless Otherwise Specified. PARAMETERS Average Offset Voltage Drift Offset Voltage Adjust Input Noise Voltage Density Input Noise Current Density Gain Bandwidth Product SYMBOL VIOTC VIOAdj EN IN GBWP RS = 10, fO = 1kHz RS = 500, fO = 1kHz VO = 1.0V, fO = 1MHz CONDITIONS VCM = 0V NOTES 2 2, 6 2 2 2 2 Slew Rate +SR VOUT = -5V to +5V 2 2 -SR VOUT = +5V to -5V 2 2 Full Power Bandwidth FPBW VPEAK = 10V 2, 3 TEMP. (oC) -55 to 125 25 25 25 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 MIN 1 80 70 80 70 1.11 MAX 7 13.0 1.0 130 110 UNITS V/oC mV nV/Hz pA/Hz MHz MHz V/s V/s V/s V/s MHz
Spec Number 3
511069-883
HA-2548/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = 15V, RLOAD = 1k, CLOAD 10pF, Unless Otherwise Specified. PARAMETERS Minimum Closed Loop Stable Gain Rise and Fall Time SYMBOL CLSG tr CONDITIONS RL = 1k, CL = 10pF VOUT = -100mV to +100mV VOUT = +100mV to -100mV VOUT = -100mV to +100mV VOUT = +100mV to -100mV To 0.01% for a 10V Step VOUT = 0V, IOUT = 0mA NOTES 2 2, 5 2, 5 2, 5 2, 5 2 2 2 2 2 2, 4 TEMP. (oC) -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 25 -55 to 125 MIN 5 MAX 15 20 15 20 30 35 30 35 260 540 UNITS V/V ns ns ns ns % % % % ns mW
tf
Overshoot
+OS
-OS
Settling Time Power Consumption NOTES:
tS PC
2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 3. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 4. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) 5. Measured between 10% and 90% points. 6. Offset adjustment range is [VIO (Measured) 1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V.
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 7. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLE 1) 1 1 (Note 7), 2, 3, 4, 5, 6 1, 2, 3, 4, 5, 6 1
Spec Number 4
511069-883
HA-2548/883 Die Characteristics
DIE DIMENSIONS: 85 mils x 91 mils x 19 mils 2160m x 2320m x 483m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA
NOTE: The Substrate may be left floating (Insulating Die Mount) or it may be mounted on a conductor at a V- potential.
WORST CASE CURRENT DENSITY: 3.6 x 104 A/cm2 SUBSTRATE POTENTIAL (Powered Up): V- (Note) TRANSISTOR COUNT: 60 PROCESS: Bipolar, Dielectric Isolation
Metallization Mask Layout
HA-2548/883
+BAL COMP
-IN
V+
+IN
OUT
V-
-BAL
Spec Number 5
511069-883
HA-2548/883 Burn-In Circuit
HA2-2548/883 METAL CAN
R3
8 1 + 3 4 R1 R2 C2 D2 V5 7 C1 2 6 D1 V+
NOTES: R1 = 1k, 5%, 1/4W (Min) R2 = 1k, 5%, 1/4W (Min) R3 = 10k, 5%, 1/4W (Min) C1 = 0.01F/Socket or 0.1F/Row C2 = 0.01F/Socket or 0.1F/Row D1 = D2 = 1N4002 or Equivalent/Board |(V+) - (V-)| = 31V 1V
Spec Number 6
511069-883
HA-2548/883 Metal Can Packages (Can)
REFERENCE PLANE A L L2 L1 A A OD OD1 Oe 2 1 Ob1 Ob BASE AND SEATING PLANE BASE METAL LEAD FINISH N k1 OD2
T8.C MIL-STD-1835 MACY1-X8 (A1)
e1 8 LEAD METAL CAN PACKAGE INCHES SYMBOL A Ob Ob1 Ob2 OD MIN 0.165 0.016 0.016 0.016 0.335 0.305 0.110 MAX 0.185 0.019 0.021 0.024 0.375 0.335 0.160 MILLIMETERS MIN 4.19 0.41 0.41 0.41 8.51 7.75 2.79 MAX 4.70 0.48 0.53 0.61 9.40 8.51 4.06 NOTES 1 1 2 1 1 1 3 3 4 Rev. 0 5/18/94
k
OD1
C L
OD2 e
F Q
0.200 BSC 0.100 BSC 0.027 0.027 0.500 0.250 0.010 45o BSC 45o BSC 8 0.040 0.034 0.045 0.750 0.050 0.045 -
5.08 BSC 2.54 BSC 1.02 0.86 1.14 19.05 1.27 1.14
e1 F k k1
0.69 0.69 12.70 6.35 0.25
Ob1
Ob2
L L1
SECTION A-A
L2 Q
NOTES: 1. (All leads) Ob applies between L1 and L2. Ob1 applies between L2 and 0.500 from the reference plane. Diameter is uncontrolled in L1 and beyond 0.500 from the reference plane. 2. Measured from maximum diameter of the product. 3. is the basic spacing from the centerline of the tab to terminal 1 and is the basic spacing of each lead or lead position (N -1 places) from , looking at the bottom of the package. 4. N is the maximum number of terminal positions. 5. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 6. Controlling dimension: INCH.
N
45o BSC 45o BSC 8
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 7
511069-883


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